The tunnel field-effect transistor (TFET) belongs to the family of so-called steep-slope devices that are currently being investigated for ultra-low. The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal-oxide-semiconductor field-effect transistor (MOSFET), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics. Electronics Tutorial about Junction Field Effect Transistor also known as the JFET Transistor used in Amplifier and Transistor Switching Circuits.
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Presented by Shinichi Takagi. The electron has a pesky ability to penetrate barriers —a phenomenon known as quantum tunneling. As chipmakers have squeezed ever more transistors onto a chip, transistors have gotten smaller, and the distances between different transistor regions have decreased.
Band To Band Tunneling
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia
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- Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO. Application to Displays, Shunpei Yamazaki. This book highlights the display applications of c-axis aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO), a new class of oxide material that challenges the dominance of silicon in… ПодробнееКупить за 9178.08 рубэлектронная книга
Tunnel Field-effect Transistors As Energy-efficient Electronic Switches
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language.
Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations.
Key features:
* Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease.
* Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject.
Tunneling Field Effect Transistor
* Discusses the basic physics behind tunneling, as well as the device physics of the TFETs.
* Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs.
Tunneling Field Effect Transistor Technology
Tunneling Field-effect Transistor Including Graphene Channel
Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.